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Preliminary Technical Information
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL 1mA Mounting torque Terminal connection torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C
IXFN40N90P
VDSS ID25
RDS(on) trr
= =
900V 33A 210m 300ns
Maximum Ratings 900 900 30 40 33 80 20 1.5 20 695 -55 ... +150 150 -55 ... +150 300 2500 3000 1.5/13 1.3/11.5 30 V V V V A A A J V/ns W C C C C V~ V~ Nm/lb.in. Nm/lb.in. g
miniBLOC, SOT-227 E153432
S G
S D G = Gate S = Source D = Drain
Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal.
Features International standard package miniBLOC, with Aluminium nitride isolation Avalanche Rated Low package inductance Fast intrinsic diode Advantages Low gate drive requirement High power density Applications:
t = 1min t = 1s
Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 20A, Note 1 TJ = 125C
Characteristic Values Min. Typ. Max. 900 3.5 6.5 200 V V nA
Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor drives Robotics and servo controls
50 A 3 mA 210 m
(c) 2008 IXYS CORPORATION, All rights reserved
DS100062(10/08)
IXFN40N90P
Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs RGi Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.05 VGS = 10V, VDS = 0.5 * VDSS, ID = 20A Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 20A RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 20A, Note 1 Gate input resistance Characteristic Values Min. Typ. Max. 18 30 1.5 14 896 58 53 50 77 46 230 70 100 S nF pF pF ns ns ns ns nC nC nC 0.18 C/W C/W SOT-227B Outline
Source-Drain Diode TJ = 25C unless otherwise specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = 20A, -di/dt = 100A/s VR = 100V
Characteristic Values Min. Typ. Max. 40 160 1.5 300 1.7 14 A A V ns C A
Note 1: Pulse test, t 300s; duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXFN40N90P
Fig. 1. Output Characteristics @ 25C
40 35 30 VGS = 10V 9V 90 80 70 VGS = 10V 9V
Fig. 2. Extended Output Characteristics @ 25C
ID - Amperes
25 20 15
8V
ID - Amperes
60 50 40 30 20 7V 8V
7V 10 5 6V 0 0 1 2 3 4 5 6 7 8 9
10 6V 0 0 5 10 15 20 25 30
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ 125C
40 35 30 VGS = 10V 8V 3.0 2.8 2.6
Fig. 4. RDS(on) Normalized to ID = 20A Value vs. Junction Temperature
VGS = 10V
RDS(on) - Normalized
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 I D = 40A I D = 20A
ID - Amperes
25 20 15 10 5 6V 0 0 2 4 6 8 10 12 14 16 18 20 7V
0.6 0.4 -50 -25 0 25 50 75 100 125 150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 20A Value vs. Drain Current
2.8 2.6 2.4 VGS = 10V TJ = 125C
40 35 30
Fig. 6. Maximum Drain Current vs. Case Temperature
RDS(on) - Normalized
2.2
ID - Amperes
TJ = 25C 0 10 20 30 40 50 60 70 80 90
2.0 1.8 1.6 1.4
25 20 15 10
1.2 1.0 0.8
5 0 -50 -25 0 25 50 75 100 125 150
ID - Amperes
TC - Degrees Centigrade
(c) 2008 IXYS CORPORATION, All rights reserved
IXFN40N90P
Fig. 7. Input Admittance
55 50 45 40 55 50 45 40 TJ = 125C 25C - 40C 25C TJ = - 40C
Fig. 8. Transconductance
g f s - Siemens
ID - Amperes
35 30 25 20 15 10 5 0 4.5 5.0 5.5 6.0
35 30 25 20 15 10 5 0 125C
6.5
7.0
7.5
8.0
8.5
0
5
10
15
20
25
30
35
40
45
50
55
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
120 16 VDS = 450V 14 100 12 I D = 20A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
80
VGS - Volts
TJ = 125C TJ = 25C
10 8 6
60
40
4 20 2 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 0 50 100 150 200 250 300 350
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100,000
Fig. 12. Maximum Transient Thermal Impedance
1.000
f = 1 MHz Capacitance - PicoFarads
10,000
Ciss
1,000 Coss
Z(th)JC - C / W
30 35 40
0.100
0.010
100 Crss 10 0 5 10 15 20 25
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_40N90P(96)10-23-08

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